期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 9, 期 6, 页码 1857-1862出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2019.2933357
关键词
Cu(In,Ga)Se-2 (CIGS); passivation; semiconductors; ultrathin
资金
- Fundacao para a Ciencia e a Tecnologia (FCT) [IF/00133/2015, PD/BD/142780/2018]
- European Union [720887]
- FCT
- ERDF through COMPETE2020
- Fundacao Luso-Americana para o Desenvolvimento (FLAD) [2019/CON8/CAN19]
- NovaCell [028075]
- InovSolarCells [029696]
- Fundação para a Ciência e a Tecnologia [PD/BD/142780/2018] Funding Source: FCT
A novel architecture that comprises rear interface passivation and increased rear optical reflection is presented with the following advantages: i) enhanced optical reflection is achieved by the deposition of a metallic layer over the Mo rear contact; ii) improved interface quality with CIGS by adding a sputtered Al2O3 layer over the metallic layer; and, iii) optimal ohmic electrical contact ensured by rear-openings refilling with a second layer of Mo as generally observed from the growth of CIGS on Mo. Hence, a decoupling between the electrical function and the optical purpose of the rear substrate is achieved. We present in detail the manufacturing procedure of such type of architecture together with its benefits and caveats. A preliminary analysis showing an architecture proof-of-concept is presented and discussed.
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