期刊
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
卷 9, 期 1, 页码 -出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2.0252001JSS
关键词
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资金
- MEXT Private University Research Branding Project
- MEXT Program for Research and Development of Next-Generation Semiconductor to Realize Energy-Saving Society
- JSPS KAKENHI [15H02019, 17H01055, 16H06416]
- Japan Science and Technology CREST [16815710]
The growth of dislocation-free and uniform GaN nanowires and high emission efficiency in a GaInN/GaN multi-quantum shell (MQS) are demonstrated. Simultaneous-supply-mode metal-organic vapor phase epitaxy and a high growth temperature are applied, and uniform GaN nanowires are obtained without a too high Si doping concentration. The GaInN/GaN MQS grown on the n-GaN nanowire has a thickness variation in the height direction, possibly owing to the interplane diffusion of Ga atoms. The MQS exhibits distributed CL emission in the case of a too high Si doping concentration in the n-GaN nanowires. For further improvement of the optical property in the MQS, a low-temperature-grown thin AlGaN shell, located just below the MQS active region, is introduced, and 6 times higher CL intensity is observed. (C) The Author(s) 2019. Published by ECS.
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