4.6 Article

Efficient All-Solution-Processed Perovskite Light-Emitting Diodes Enabled by Small-Molecule Doped Electron Injection Layers

期刊

ADVANCED OPTICAL MATERIALS
卷 8, 期 2, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201900567

关键词

all-solution-processed PeLEDs; charge transfer; electron injection layers; light-emitting diodes; perovskites

资金

  1. National Natural Science Foundation of China [51675322, 61605109, 61735004, 61674029]
  2. National Key Research and Development Program of China [2016YFB0401702, 2016YFB0401600]
  3. Shanghai Rising-Star Program [17QA1401600]
  4. Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
  5. National Natural Science Foundation for Distinguished Young Scholars of China [51725505]

向作者/读者索取更多资源

Metal halide perovskites have attracted considerable attention in the field of light-emitting diodes due to their high color purity and solution processability. However, most perovskite light-emitting diodes (PeLEDs) employ thermally deposited charge transport layers (CTLs) on top of perovskite layers. In order to realize low-cost and scalable fabrication of PeLEDs, all-solution process is highly desired, but still remaining great challenges. Here, an efficient all-solution-processed green PeLEDs is reported by incorporating 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) doped conjugated amino-alkyl substituted polyfluorene poly[(9,9-bis(3 '-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) electron injection layer, achieving a maximum luminance of 9875 cd m(-2), a high current efficiency of 10.41 cd A(-1), and an external quantum efficiency of 3.19%. Since the solvents used for perovskite precursors and PFN are orthogonal, the protected and complete interface of perovskite film and CTL is effectively obtained by solution processes. The doping of TPBi into PFN not only enhances the capability of electron injection, but also significantly suppresses the emission quenching of perovskite films caused by the charge transfer between perovskite and PFN due to the reduced difference in their work functions. This work provides an efficient approach for the development of all-solution-processed PeLEDs.

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