期刊
NANO-MICRO LETTERS
卷 11, 期 1, 页码 -出版社
SHANGHAI JIAO TONG UNIV PRESS
DOI: 10.1007/s40820-019-0320-y
关键词
All-inorganic CsPbI3 perovskites; Interface engineering; Doping; ZnO; Simulation
资金
- National Natural Science Foundation of China [61604119, 61704131, 61804111]
- Initiative Postdocs Supporting Program [BX20180234]
- China Postdoctoral Science Foundation [2018M643578]
- Young Elite Scientists Sponsorship Program by CAST [2016QNRC001]
- Fundamental Research Funds for the Central Universities
Interface engineering has been regarded as an effective and noninvasive means to optimize the performance of perovskite solar cells (PSCs). Here, doping engineering of a ZnO electron transport layer (ETL) and CsPbI3/ZnO interface engineering via introduction of an interfacial layer are employed to improve the performances of CsPbI3-based PSCs. The results show that when introducing a TiO2 buffer layer while increasing the ZnO layer doping concentration, the open-circuit voltage, power conversion efficiency, and fill factor of the CsPbI3-based PSCs can be improved to 1.31 V, 21.06%, and 74.07%, respectively, which are superior to those of PSCs only modified by the TiO2 buffer layer or high-concentration doping of ZnO layer. On the one hand, the buffer layer relieves the band bending and structural disorder of CsPbI3. On the other hand, the increased doping concentration of the ZnO layer improves the conductivity of the TiO2/ZnO bilayer ETL because of the strong interaction between the TiO2 and ZnO layers. However, such phenomena are not observed for those of a PCBM/ZnO bilayer ETL because of the weak interlayer interaction of the PCBM/ZnO interface. These results provide a comprehensive understanding of the CsPbI3/ZnO interface and suggest a guideline to design high-performance PSCs.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据