期刊
SCIENTIFIC REPORTS
卷 9, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-019-53186-2
关键词
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资金
- Ministry of Education, Culture, Sports and Technology (MEXT) of Japan [16K17971, 16K17853]
- MEXT [16K13977, 16H06353, 18H04482]
- JSPS
- Deutsche Forschungsgemeinschaft [CRC 951]
- HySPRINT innovation lab at Helmholtz-Zentrum Berlin
- Grants-in-Aid for Scientific Research [16K17853, 16K13977, 18H04482, 16K17971, 16H06353] Funding Source: KAKEN
Near-infrared sensitization of monolayer MoS2 is here achieved via the covalent attachment of a novel heteroleptic nickel bis-dithiolene complex into sulfur vacancies in the MoS2 structure. Photocurrent action spectroscopy of the sensitized films reveals a discreet contribution from the sensitizer dye centred around 1300 nm (0.95 eV), well below the bandgap of MoS2 (2.1 eV), corresponding to the excitation of the monoanionic dithiolene complex. A mechanism of conductivity enhancement is proposed based on a photo-induced flattening of the corrugated energy landscape present at sulfur vacancy defect sites within the MoS2 due to a dipole change within the dye molecule upon photoexcitation. This method of sensitization might be readily extended to other functional molecules that can impart a change to the dielectric environment at the MoS2 surface under stimulation, thereby extending the breadth of detector applications for MoS2 and other transition metal dichalcogenides.
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