期刊
MATERIALS
卷 12, 期 19, 页码 -出版社
MDPI
DOI: 10.3390/ma12193212
关键词
atomic layer deposition (ALD); ZnS thin films; annealing; optical properties
类别
资金
- Ministry of National Defense Republic of Poland Program-Research Grant Military University of Technology Project [13-995]
- Academy of Finland [318913, 288212]
- Academy of Finland (AKA) [288212, 288212] Funding Source: Academy of Finland (AKA)
The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures >= 400 degrees C and annealing time >= 2 h, and 1:1 stoichiometry was obtained when annealed at 500 degrees C for 4 h. ZnS crystallized into small crystallites (1-7 nm) with cubic sphalerite structure, which remained stable under the applied annealing conditions. The size of the crystallites (D) tended to decrease with annealing temperature, in agreement with the EDS data (decreased content of both S and Zn with annealing temperature); the D for samples annealed at 600 degrees C (for the time <= 2 h) was always the smallest. Both reflectivity and ellipsometric spectra showed characteristics typical for quantum confinement (distinct dips/peaks in UV spectral region). It can thus be concluded that the amorphous ZnS layer obtained at a relatively low temperature (150 degrees C) from organic S precursor transformed into the layers built of small ZnS nanocrystals of cubic structure after annealing at a temperature range of 300-600 degrees C under Ar atmosphere.
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