期刊
NATURE COMMUNICATIONS
卷 10, 期 -, 页码 -出版社
NATURE PUBLISHING GROUP
DOI: 10.1038/s41467-019-12056-1
关键词
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资金
- National Key Research and Development Program of China [2017YFB0702100]
- National Natural Science Foundation of China [51705017, U1706221, 51727901]
- NYSTAR Focus Center at Rensselaer Polytechnic Institute (RPI) [C150117]
- NSF [1635520, 1712752, 1508410, 1706815]
- Air Force Office of Scientific Research [FA9550-18-1-0116]
- Office of Naval Research [N000141812408]
- NSF MIP PARA-DIM [1539918]
- National Science Foundation [OIA-1538893, EFRI-1433311, TG-DMR17008, ACI-1053575]
- Office for Naval Research [N00014-17-1-2232]
- U.S. Department of Defense (DOD) [N000141812408] Funding Source: U.S. Department of Defense (DOD)
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1508410] Funding Source: National Science Foundation
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [1635520] Funding Source: National Science Foundation
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [1706815] Funding Source: National Science Foundation
Crystallographic dislocation has been well-known to be one of the major causes responsible for the unfavorable carrier dynamics in conventional semiconductor devices. Halide perovskite has exhibited promising applications in optoelectronic devices. However, how dislocation impacts its carrier dynamics in the 'defects-tolerant' halide perovskite is largely unknown. Here, via a remote epitaxy approach using polar substrates coated with graphene, we synthesize epitaxial halide perovskite with controlled dislocation density. First-principle calculations and molecular-dynamics simulations reveal weak film-substrate interaction and low density dislocation mechanism in remote epitaxy, respectively. High-resolution transmission electron microscopy, high-resolution atomic force microscopy and Cs-corrected scanning transmission electron microscopy unveil the lattice/atomic and dislocation structure of the remote epitaxial film. The controlling of dislocation density enables the unveiling of the dislocation-carrier dynamic relation in halide perovskite. The study provides an avenue to develop free-standing halide perovskite film with low dislocation density and improved carried dynamics.
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