Dirac plasmon-assisted asymmetric hot carrier generation for room-temperature infrared detection

Due to the low photon energy, detection of infrared photons is challenging at room temperature. Thermoelectric effect offers an alternative mechanism bypassing material bandgap restriction. In this article, we demonstrate an asymmetric plasmon-induced hot-carrier See-beck photodetection scheme at room temperature that exhibits a remarkable responsivity of 2900 VW-1, detectivity of 1.1 x 10(9) Jones along with a fast response of similar to 100 ns in the technologically relevant 8-12 mu m band. This is achieved by engineering the asymmetric electronic environment of the generated hot carriers on chemical vapor deposition grown large area nanopatterned monolayer graphene, which leads to a temperature gradient of 4.7 K across the device terminals for an incident power of 155 nW, thereby enhancing the photo-thermoelectric voltage by manifold compared to previous reports. The results presented outline a strategy for uncooled, tunable, and multispectral infrared detection.