期刊
SMALL
卷 15, 期 50, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201904906
关键词
graphene on insulator; interface; metal free; sapphire; wafer scale
类别
资金
- European Union [696656-GrapheneCore1, 785219-GrapheneCore2]
- Danish National Research Foundation Center of Excellence for Nanostructured Graphene (CNG) [DNRF103]
- project QUANTRA - MAECI
- project QUANTUM2D - MIUR
The adoption of graphene in electronics, optoelectronics, and photonics is hindered by the difficulty in obtaining high-quality material on technologically relevant substrates, over wafer-scale sizes, and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapor deposition is demonstrated. Low energy electron diffraction, low energy electron microscopy, and scanning tunneling microscopy measurements identify the Al-rich reconstruction (root 31x root 31) R +/- 9 degrees of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm(2) V-1 s(-1). The process is scaled up to 4 and 6 in. wafers sizes and metal contamination levels are retrieved to be within the limits for back-end-of-line integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.
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