期刊
SENSORS
卷 19, 期 20, 页码 -出版社
MDPI
DOI: 10.3390/s19204386
关键词
photoelectrochemistry; InGaN/GaN epilayer; cell imaging; light-activated electrochemistry; light-addressable potentiometric sensor
资金
- China Scholarship Council
- Horizon 2020 (a Marie Sklodowska-Curie Individual Fellowship) [H2020-MSCA-IF-2016-745820]
- Engineering and Physical Science Research Council (EPSRC) [EP/R035571/1]
- EPSRC [EP/M010589/1, EP/R035571/1] Funding Source: UKRI
AC photoelectrochemical imaging at electrolyte-semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations and electrical impedance. In this work, thin films of InGaN/GaN were used successfully for AC photoelectrochemical imaging, and experimentally shown to generate a considerable photocurrent under illumination with a 405 nm modulated diode laser at comparatively high frequencies and low applied DC potentials, making this a promising substrate for bioimaging applications. Linear sweep voltammetry showed negligible dark currents. The imaging capabilities of the sensor substrate were demonstrated with a model system and showed a lateral resolution of 7 microns.
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