期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 34, 期 11, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/ab4298
关键词
thin film transistor; amorphous oxide semiconductor; sub-threshold current; sub-threshold slope; Interface state density; Interface capacitance
类别
资金
- Pusan National University
The sub-threshold characteristics of a disordered thin-film transistor (TFT) are important, where an interface quality and a demarcation between on and off states of the transistor operation are reflected through the sub-threshold slope (SS). Here, we find that the SS associated with the degree of disorder at the film interface appears to be a function of the gate voltage within the sub-threshold regime. In this respect, we provide an accurate physically-based model to explain this gate bias-dependent sub-threshold slope (SS) for amorphous oxide thin-film transistors whereas the conventional model with the constant SS has a huge discrepancy in comparison with the experimental results. For this, we employ a linear distribution of interfacial states rather than the conventional constant model. The proposed model is applied to the measured sub-threshold current-voltage characteristics for different temperatures lower than 300 K, exhibiting a good agreement with each other.
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