Lateral source field-plated β-Ga2O3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm2

In this letter, lateral beta-Ga2O3 MOSFETs with source field plate are fabricated on Si-doped homoepitaxial film on (010) Fe-doped semi-insulating beta-Ga2O3 substrate. The drain extension in the source field plate effectively suppresses the peak electric field in the Ga2O3 channel, and improves the breakdown voltage greatly. Moreover, fluorinert FC-770 is used to reduce air breakdown potential during the breakdown testing. The breakdown voltage of the device with L-sd of 28 mu m is measured as high as 2360 V, which is the highest value in reported lateral Ga2O3 MOSFET. Besides, Si-ion implantation is adopted to reduce the ohmic contact resistance (R-c). The value of specific on-resistance (R-on,R-sp) is calculated to be 560 m Omega cm(2), which is a recorded value under such high breakdown voltage, and also lower than the theoretical limit of Si-based power devices under the same breakdown voltage.