4.7 Article

Non-diffusional growth mechanism of I1 basal stacking-faults inside twins in hcp metals

期刊

SCRIPTA MATERIALIA
卷 172, 期 -, 页码 149-153

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2019.07.024

关键词

Twinning; Plastic deformation; Grain interfaces; Interface defects; Dislocations

资金

  1. Czech Science Foundation [18-07140S]
  2. Spanish MINECO [FIS2015-69017-P]
  3. Ministry of Education, Youth and Sports of the Czech Republic under [Project CEITEC 2020] [LQ1601]

向作者/读者索取更多资源

Deformation twins in magnesium exhibit considerable densities of I-1 basal-plane stacking-faults. Since these faults generally transect their host twin, they presumably lengthen concommitantly with boundary migration during twin growth. We investigate this process using atomic-scale simulation for {10 (1) over bar2} and {10 (1) over bar1} twinning. It is demonstrated first that the intersection of a stacking-fault with a stationary twin boundary is delineated by a sessile imperfect disconnection. Subsequently, by applying a shear strain, we stimulate twin growth by the passage of twinning disconnections along twin boundaries, and show that these are able to propagate through such pre-existing imperfect disconnections in a conservative manner. (C) 2019 Acta Materialia Inc Published by Elsevier Ltd. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据