期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 14, 期 1, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201900087
关键词
black silicon; conformal growth; hydrogenated amorphous silicon; plasma-enhanced chemical vapor deposition; surface passivation
资金
- Scientific and Technological Research Council of Turkey (TUBITAK) BIDEB-2219 Postdoctoral Research Programme
- CENTEM project [CZ.1.05/2.1.00/03.0088]
- ERDF as part of the Ministry of Education, Youth and Sports OP RDI programme
- CENTEM+ from Ministry of Education, Youth and Sports [LO1402]
- European Union [727523]
Solar cells based on black silicon (b-Si) are proven to be promising in photovoltaics (PVs) by exceeding 22% efficiency. To reach high efficiencies with b-Si surfaces, the most crucial step is the effective surface passivation. Up to now, the highest effective minority carrier lifetimes are achieved with atomic layer-deposited Al2O3 or thermal SiO2. Plasma-enhanced chemical vapor deposition (PECVD)-grown hydrogenated amorphous silicon (a-Si:H) passivation of b-Si is seldom reported due to conformality problems. In this current study, b-Si surfaces superposed on standard pyramidal textures, also known as modulated surface textures (MSTs), are successfully passivated by PECVD-grown conformal layers of a-Si:H. It is shown that under proper plasma-processing conditions, the effective minority carrier lifetimes of samples endowed with front MST and rear standard pyramidal textures can reach up to 2.3 ms. A route to the conformal growth is described and developed by transmission electron microscopic (TEM) images. Passivated MST samples exhibit less than 4% reflection in a wide spectral range from 430 to 1020 nm.
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