Double-gate InZnO synaptic transistor with aqueous-solution-processed wheat flour electrolyte

The use of environmentally friendly equipment to build artificial neural networks may be an important development trend for next-generation electronic products. Therefore, it is of great significance to realize a brain-excited computer by constructing a low-power and low-cost bio synapse device. However, most electrolyte-gated transistors are currently synthesized using non-biocompatible materials. Wheat flour is a biocompatible and renewable material extracted from wheat. In addition, we have found that wheat flour film has strong ionic conductivity and can therefore be used as an electrolyte material for bio synaptic transistors. An ion/electron coupled bio synapse transistor using wheat flour as the electrolyte layer exhibits excellent electrical performance at operating voltages below 2 V. The response time of ions in wheat film is estimated to be 0.82 s by measuring the pulse width of a single pulse. More importantly, some important synaptic behaviors, such as EPSC, PPF, dynamic filtering characteristics and dendritic integration, are successfully simulated by using a dual-gate (bottom gate and floating gate) in our synaptic transistors. The superlinear addition is successfully simulated by adjusting the ion response in the wheat flour film. Because the development of electronic devices for biocompatible and biodegradable materials is essential, this work may spur new directions for the development of environmental neuromorphic electronics.