Manipulating the hysteresis via dielectric in organic field-effect transistors toward synaptic applications

The cause of hysteresis in organic field-effect transistors (OFETs) and its application in organic synaptic transistors are studied. Benefiting from the slow polarization process of dipoles in organosilicone (Dow Corning 1-2577) dielectric, the devices exhibit the desirable synaptic behaviors, including excitatory postsynaptic current (EPSC), memory function, potentiation/depression characteristics, endurance characteristics and spikeamplitude-dependent plasticity. Further, combining the DC 1-2577 dielectric with the polydimethylsiloxane (PDMS) support, a flexible conformable DC 1-2577 dielectric organic synapse transistor is fabricated, which provides a great potential for the wearable and implantable artificial neuromorphic systems for artificial intelligence and new-generation computers.