Fluorescent incandescent light sources from individual quadrilateral ZnO microwire via Ga-incorporation

By means of nanophotonics principle, the thermal radiation can be tailored, thus, traditional tungsten lamp light source can glow the vitality and the vigor due to the low-efficiency approaching to commercial fluorescent or light-emitting diode bulbs. However, too far by demanding exacting terms, such as high-temperature thermal radiation (similar to 3000 K), high-vacuum encapsulation technology, restricted spectrally controllable source and so on, tungsten-based incandescent lamp filament has greatly limited the application in lighting, diagnosis and treatment, communication, imaging, etc. Herein, individual Ga-doped ZnO microwires (ZnO:Ga MWs) were successfully synthesized, which can be utilized to construct typical incandescent sources. By adjusting the Ga-incorporation, lighting colors are tuned in the visible spectral band. Especially, by incorporating Au quasiparticle nanofilms, the incandescent lighting features can further be modulated, such as the emission peaks, the modulation of lighting regions. Therefore, individual ZnO:Ga MWs based incandescent emitters can undertake a new function of the oldest, affordable and easily prepared light sources. While preliminary, individual ZnO:Ga MWs being treated as efficient incandescent light sources, can also open up intriguing scientific questions, and possible applications of linear, transparent, flexible displays and optical interconnects with electronic circuits. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement