期刊
OPTICAL MATERIALS
卷 96, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.optmat.2019.109347
关键词
Enhancing light absorption; Broadband perfect absorbers; Epsilon-near-zero mode; Gap plasmon resonance; Metamaterials
资金
- National Natural Science Foundation of China [51877015, 51377179, 61301120, 11611130023, 11403054]
- Swedish Foundation for International Cooperation in Research and Higher Education [CH2015-6360]
- Fundamental Research Funds for the Central Universities [2019CDXYTX0023, 2019CDJGFWDZ001]
- Chongqing Natural Science Foundation [cstc2018jscxmsyb1002]
- Open Fund of Guizhou Provincial Key Laboratory of Radio Astronomy and Data Processing [KF201815]
- graduate research and innovation foundation of Chongqing, China [CYS17039]
- China Scholarships Council [201706050024]
We propose a novel and simple method to achieve perfect light absorption over a broadband by coupling a gap plasmon mode to an epsilon-near-zero (ENZ) mode, which is a new path for tailoring light-matter interactions. Near-perfect light absorption (over 99%) in the wavelength range of 1400 nm-1655 nm can be achieved utilizing a gold-disk periodically patterned metal-dielectric-metal (MDM) device by integrating an ultrathin ITO (indium tin oxide) film. The ENZ mode can be excited effectively by coupling the gap plasmon resonance to conducting ITO (indium tin oxide) nanolayer (ENZ wavelength of the ITO nanofilm close to 1403 nm) under normal incidence. Compared with the device without ITO nanolayer, the device integrating ITO ultrathin film shows wideband perfect light absorption. Besides, the thickness of SiO2 spacer layer is critical for the coupling strength of metamaterial resonator and ENZ mode. To achieve broadband absorption, the coupling strength of the ENZ mode and gap plasmon mode should be between the strong coupling and weak coupling regimes. The method is also effective for the design of multiband optoelectronic devices with simple structure and low cost.
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