4.8 Article

Stacking Order in Graphite Films Controlled by van der Waals Technology

期刊

NANO LETTERS
卷 19, 期 12, 页码 8526-8532

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b03014

关键词

Stacking order; rhombohedral graphite; domains; zigzag; van der Waals assembly

资金

  1. EPSRC Early Career Fellowship [EP/N007131/1]
  2. ERC H2020 Starter Grant EvoluTEM
  3. EPSRC [EP/P009050/1]
  4. EPSRC [EP/P009050/1, EP/K005014/1, EP/N007131/1] Funding Source: UKRI

向作者/读者索取更多资源

In graphite crystals, layers of graphene reside in three equivalent, but distinct, stacking positions typically referred to as A, B, and C projections. The order in which the layers are stacked defines the electronic structure of the crystal, providing an exciting degree of freedom which can be exploited for designing graphitic materials with unusual properties including predicted high-temperature superconductivity and ferromagnetism. However, the lack of control of the stacking sequence limits most research to the stable ABA form of graphite. Here, we demonstrate a strategy to control the stacking order using van der Waals technology. To this end, we first visualize the distribution of stacking domains in graphite films and then perform directional encapsulation of ABC-rich graphite crystallites with hexagonal boron nitride (hBN). We found that hBN encapsulation, which is introduced parallel to the graphite zigzag edges, preserves ABC stacking, while encapsulation along the armchair edges transforms the stacking to ABA. The technique presented here should facilitate new research on the important properties of ABC graphite.

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