A comparison of computational equations for understanding the effect of adhesion energy on mobility of DNTT thin-film transistors

In organic thin-film transistors (OTFTs), adhesion energy plays an important role in the morphology of the vacuum-deposited organic semiconductor film and hence affects the field-effect mobility. Currently, two equations have been reported to calculate the adhesion energy between semiconductor and dielectric. However, the differences of the two equations remain unexplored. Here, we reflect the differences by simulation, experiment and theoretical derivation methods. Results show that the change of mobility is consistent with the change of adhesion energy calculated by Eq. (1), which is ascribed to the good availability of Eq. (1) for both polar and non-polar dielectrics. Our results provide an exact guideline for calculation of adhesion energy and help the selection of dielectrics to obtain high-performance OTFTs.