期刊
MATERIALS SCIENCE & ENGINEERING R-REPORTS
卷 138, 期 -, 页码 60-84出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.mser.2019.04.001
关键词
GaN; Dimensionality; Low dimensional; Dimensionality-dependent property; Synthesis
资金
- National Natural Science Foundation of China [21673161]
- Science and Technology Department of Hubei Province [2017AAA114]
- Sino-German Center for Research Promotion [1400]
- Fundamental Research Funds for the Central Universities [2042017kf0208]
Wurtzite GaN materials underpin many aspects of optoelectronic applications due to the special tetrahedral-coordinated structure. Compared with three dimensional (3D) GaN, low dimensional GaN provides structural and electronic changes, such as different geometrical configuration, surface trapped states and quantum confinement effect, which impose dramatic effects on the properties and even the ultimate applications. To construct desirable devices and expand the scope of applications for GaN, it necessitates an in-depth understanding of the dimensionality-dependent property. In this review, we firstly review the structure and properties of GaN in different dimensionalities. Successively, strategies for realizing the synthesis of GaN with various dimensionalities are generalized. Afterwards, we examine how their structure and properties are utilized in the significant applications involving microelectronic devices and energy conversion fields. Finally, we conclude by outlining a few research directions of GaN semiconductors that might be worthwhile for exploration in the future.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据