期刊
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 10, 期 21, 页码 6850-6856出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.9b02793
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资金
- National Natural Science Foundation of China [61874037, 11474076, 61705043, 11674061]
- National Postdoctoral Science Foundation of China [2017M621254, 2018T110280]
- Heilongjiang Provincial Postdoctoral Science Foundation [LBH-TZ1708]
- Key Laboratory of Microsystems and Microstructures Manufacturing of Ministry of Education, Harbin Institute of Technology [2017KM003]
- Fundamental Research Funds for the Central Universities [HIT.NSRIF.2019060]
- Ministry of Education Joint Fund for Equipment Pre-Research [6141A02033241]
- Open Project of the State Key Laboratory of Luminescence and Applications [SKLA-2018-05]
A high responsivity self-powered solar-blind deep UV (DUV) photodetector with high rejection ratio was proposed based on inorganic/organic hybrid p-n junction. Owing to the high crystallized beta-Ga2O3 and excellent transparent conductive polymer PEDOT:PSS, the device exhibited ultrahigh responsivity of 2.6 A/W at 245 nm with a sharp cutoff wavelength at 255 mm without any power supply. The responsivity is much larger than that of previous solar-blind DUV photodetectors. Moreover, the device exhibited an ultrahigh solar-blind/UV rejection ratio (R-245 nm/R-280 nm) of 10(3), which is two orders of magnitude larger than the average value reported in Ga2O3-based solar-blind photodetectors. In addition, the photodetector shows a narrow bandpass response of only 17 nm in width. This work might be of great value in developing a high wavelength selective DUV photodetector with respect to low cost for future energy-efficient photoelectric devices.
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