期刊
JOURNAL OF LUMINESCENCE
卷 214, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jlumin.2019.116522
关键词
CuI thin films; Point defect level; Transition mechanism; Thermal activation energy
类别
资金
- National Science Foundation of China [61275058, 51772019]
- Key Laboratory of Luminescence and Optical Information of China in Beijing Jiaotong University
Copper Iodide (CuI) thin films were prepared by iodination technique. The transmission spectrum showed band gap of prepared CuI thin film was 3.0 eV. A main emission at 404 nm (near-band emission), a defect emission at 412 nm (CBM -> V-Cu) and another defect emission at 710 nm (V-I -> Cu-I) were found in photoluminescence spectrum. Transition mechanism of CuI was proposed by low-temperature photoluminescence spectrum. Emission at 412 nm is greatly affected by ambient temperature. The results show that the thermal activation at room temperature inhibits the emission at 412 nm, and the inhibition decreases when the temperature dropped, resulting in an increase in emission intensity at 412 nm and a decrease in emission intensity at 710 nm.
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