期刊
JOURNAL OF APPLIED PHYSICS
卷 126, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5087571
关键词
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资金
- Air Force Office of Scientific Research [FA9550-14-1-0090, FA9550-18-1-0053]
- National Science Foundation IRES [1358111]
- National Science Foundation (NSF) [DMR-1707372]
- National Science Foundation Graduate Research Fellowship [DGE-1610403]
- European Commission [H2020-ICT-2015-25-688579, H2020-ICT-2017-1-780997]
- Swiss State Secretariat for Education, Research and Innovation [15.0285]
- Office Of The Director
- Office Of Internatl Science &Engineering [1358111] Funding Source: National Science Foundation
Epitaxial barium titanate (BTO) thin films are grown on strontium titanate-buffered Si(001) using atomic layer deposition (ALD) at 225 degrees C. X-ray diffraction confirms compressive strain in BTO films after the low temperature growth for films as thick as 66nm, with the BTO c-axis oriented in the out-of-plane direction. Postdeposition annealing above 650 degrees C leads to an in-plane c-axis orientation. Piezoresponse force microscopy was used to verify the ferroelectric switching behavior of ALD-grown films. Electrical and electro-optic measurements confirm BTO film ferroelectric behavior in out-of-plane and in-plane directions, respectively, at the micrometer scale.
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