Dielectric property and energy-storage performance of (100)-preferred (1-x)PbTiO3-xBi(Mg0.5Ti0.5)O3 relaxor ferroelectric thin films

In this work, relaxor ferroelectric thin films (1-x)PbTiO3-xBi(Mg0.5Ti0.5)O-3 [(1-x)PT-xBMT, x = 0.4, 0.5 and 0.6] were prepared on LaNiO3/Si(100) (LNO/Si) substrates by sol-gel method. All films exhibit a single perovskite structure and possess high compactness. As the BMT content increases, the diffusion coefficient gamma increases from 1.84 to 1.92, indicating the gradually enhanced relaxor behavior. The thin film with x = 0.5 has a lower leakage current density than those of other components, which leads to a high breakdown strength. As a result, an ultrahigh recoverable energy-storage density of 51.0 J/cm(3) under 2900 kV/cm was achieved in the thin film with x = 0.5. In addition, the 0.5PT-0.5BMT thin film also exhibited excellent frequency stability and temperature stability, and the both changes rate were less than 2.8%. The outstanding energy-storage performance is attributed to its excellent electric-field endurance and relaxor behavior. This work indicates the 0.5PT-0.5BMT thin films is a potential energy-storage material. (C) 2019 Elsevier B.V. All rights reserved.