Enhancement of epitaxial lateral overgrowth in the mist chemical vapor deposition of ?-Ga2O3 by using a-plane sapphire substrate

Selective area growths of ?-Ga2O3 were demonstrated on c-, m-, and a-plane sapphire substrates by the mist-CVD method using SiO2 as a mask material. We successfully achieved the coalescence of the ?-Ga2O3 on the mask with the 1010