期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 59, 期 -, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/1347-4065/ab5b68
关键词
-
资金
- Innovative Science and Technology Initiative for Security, ATLA, Japan
GaN-based high-electron-mobility transistors (HEMTs) fabricated on SiC substrates were successfully bonded to single-crystal diamond heat spreader by a surface activated bonding method with a thin titanium (Ti) cover layer. A thin Ti layer on the diamond improved the bonding strength of the SiC/diamond interface since the formation of an amorphous layer on the diamond surface was suppressed. This SiC/diamond bonding process was applied to high-output power InAlGaN/GaN HEMTs on diamond heat spreaders. The structure with the diamond successfully reduced the thermal resistance of the devices and enabled their high-power operation. (C) 2020 The Japan Society of Applied Physics
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