Rb10Zn4Sn4S17: A Chalcogenide with Large Laser Damage Threshold improved from the Mn-Based Analogue

In the military and civilian fields, with the development of new technologies, high-powered nonlinear optical (NLO) crystals demonstrate broad application prospects. In this work, for purposes of designing a better NLO material, a new chalcogenide Rb10Zn4Sn4S17 was successfully designed with a high temperature solid-state method on the basis of previously reported compound Sr3MnSn2S8. The experimental results indicate that Rb10Zn4Sn4S17 possesses a prominent band gap of 3.59 eV, compared with the laser damage threshold (LDT) of Sr3MnSn2S8 (3 times that of AgGaS2); Rb10Zn4Sn4S17 shows an outstanding LDT about 5 times that of AgGaS2. Meanwhile, it has an ideal second harmonic generation (SHG) response approximately 0.7 times that of AgGaS2.