期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 66, 期 10, 页码 4326-4330出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2934636
关键词
Alternative metals; back end of line (BEOL); interconnects; mean-free path; middle of line; nickel; resistivity scaling; surface scattering
资金
- SRC [2881]
- New York State's Empire State Development's Division of Science, Technology and Innovation (NYSTAR) through the Focus Center-New York, Rensselaer Polytechnic Institute (RPI) [C150117]
- NSF [1740271, 1712752]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1740271] Funding Source: National Science Foundation
Epitaxial Ni(001) layers are sputter deposited on MgO(001) substrates and their electrical resistivity rho measured in situ as a function of thickness d(Ni) = 5-100 nm to quantify the resistivity size effect due to electron surface scattering. X-ray diffraction theta-2 theta scans, omega-rocking curves, and pole figures confirm an epitaxial layer-substrate relationshipwith Ni[001] parallel to MgO[001] and Ni[100] parallel to MgO[100]. The resistivity is well described with the semiclassical model by Fuchs and Sondheimer and a room-temperature bulk resistivity rho(o) = 7.04 mu Omega cm, yielding a bulk electron meanfree path lambda = 26 +/- 2 and 350 +/- 20 nm at 295 and 77 K, respectively. Air exposure causes a resistivity increase by up to 21%, which is attributed to monolayer surface oxidation that results in a transition from 30% specular to completelydiffuse electronsurface scattering. Allmeasured data are consistentwith a temperature-independentproduct rho(o)lambda = 18.3 x 10(-16) Omega m(2), which is 4.5 times larger than previously predicted from first-principles, indicating that Ni is less promising as a metal for narrow interconnect lines than those predictions suggest.
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