期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 66, 期 11, 页码 4535-4545出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2933615
关键词
Dielectrics; Electric breakdown; Reliability; Integrated circuit modeling; Transient analysis; Current measurement; Voltage measurement; Circuit failure; clustering model; hard breakdown (HBD); non-Poisson area scaling; nonuniformity; post-breakdown (BD); product failure; progressive breakdown (PBD); reliability; soft breakdown (SBD); time-dependent dielectric breakdown (TDDB); variability; variation
Device dimension scaling and process complexity have revealed new phenomena such as post-breakdown (BD) and variability issues in advanced technology nodes. Coupling of the first BD phenomena and their methodologies discussed in part I with the development of post-BD methodologies allows engineers to use device stress-data to accurately predict the product failure lifetime. The statistical modeling and new advances in understanding the root cause of variability issues have mitigated these seemingly uncontrollable catastrophes so that the scaling of the advanced technology process can continue its successful path forward. These two important aspects of dielectric BD will be reviewed in part II.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据