4.6 Article

Facts and Myths of Dielectric Breakdown Processes-Part I: Statistics, Experimental, and Physical Acceleration Models

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 66, 期 11, 页码 4523-4534

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2933612

关键词

Dielectrics; Reliability; Acceleration; Logic gates; Electric breakdown; Dielectric materials; Hafnium oxide; Acceleration model; voltage; field; temperature; polarity dependence of breakdown; Poisson area scaling; reliability; statistics; time-dependent dielectric breakdown (TDDB); weakest-link property

向作者/读者索取更多资源

In part I of this article, the current understanding and experimental observations of the so-called first breakdown (BD) phenomena are reviewed and summarized with a focus on BD statistics and voltage/field acceleration models because of their critical importance to reliability projection. Experimental BD data over a wide range of dielectric materials are reviewed together in a common framework. A thorough examination of various analytic BD models with key features is provided in comparison with experimental observations. In addition, we highlight advanced numerical BD models, which bring out more detailed aspects of the BD process. This state-of-the-art review can provide researchers and engineers with a coherent, global understanding to help continue their research work in this exciting field of dielectric BD.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据