期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 66, 期 10, 页码 4148-4150出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2934181
关键词
AlGaN/GaN HEMT; Boltzmann limit; negative capacitance; subthreshold swing (SS); transistor
资金
- National Key Research and Development Program of Ministry of Science and Technology [2018YFB0406603]
- National Natural Science Foundation of China [61625401, 61574101, 61704051, 51872084, U1632156]
- Natural Science Foundation of Hunan Province [2017RS3021, 2017JJ3033]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]
Due to the Boltzmann distribution of carriers, the subthreshold swing (SS) of traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) is above 60 mV/dec at room temperature. In this article, GaN-based negative capacitance field-effect transistors (NCFETs) were fabricated by introducing HfO2/P(VDF-TrFE) stack as the gate dielectric layer. With the voltage amplification effect of the ferroelectric, the GaN NCFETs demonstrate the ultralow SS value of 36.3 mV/dec at room temperature, which also advances the MOSFETs in terms of saturation current (633.4 mu A/mu m) and ON - OFF ratio (> 10(7)). Therefore, this article demonstrates the feasibility of NCFETs for breaking the Boltzmann limit in III-V semiconductors-based transistors and opens up an avenue for switching electronic devices for portable applications.
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