期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 31, 期 21, 页码 1685-1688出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2019.2939550
关键词
Optical phased array; silicon photonics; electro-optic; p-i-n phase shifter
资金
- Future Semiconductor Device Technology Development Program through the Ministry of Trade, Industry and Energy (MOTIE)
- Korea Semiconductor Research Corporation (KSRC) [10085592]
- Brain Korea 21 Plus Project of School of Electrical Eng. KAIST in 2019
- [N04140260]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10085592] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We present a 1 x 16 silicon optical phased array using electro-optic phase shifters to attain high-speed operation with low power consumption. The phase shifters are constructed using a p-i-n junction structure with the p- and n-doped regions formed on both sides of the i-region. The i-region width of the phase shifter is optimized considering the power consumption for phase-tuning and the propagation loss in the phase shifter. The fabricated p-i-n phase shifter exhibits a fast operating speed of 20 MHz and a low phase-tuning power of 1.7 mW/pi. From a 1-D optical phased array integrated with 2-mu m-pitch grating radiators, a wide beam-steering range of 45 degrees is attained along the transversal direction at a 1.55 mu m wavelength. Average power consumption for the beam-forming operation of the 1 x 16 OPA is measured to be 39.6 mW and the average transition time to steer the beam is 24 ns.
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