4.6 Article

Algebraic Series-Parallel-Based Switched-Capacitor DC-DC Boost Converter With Wide Input Voltage Range and Enhanced Power Density

期刊

IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 54, 期 11, 页码 3118-3134

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2019.2935556

关键词

Video recording; Topology; Capacitors; Microelectronics; Switches; Very large scale integration; Optimized production technology; Algebraic; boost converter; charge sharing loss; dc-dc; parasitic loss; power density; rational; series-parallel (SP); switched-capacitor (SC); voltage conversion ratio (VCR)

资金

  1. Macao Science and Technology Development Fund [FDCT069/2016/A2]
  2. Research Committee of the University of Macau [MYRG2018-00196-AMSV]

向作者/读者索取更多资源

This article presents an algebraic series-parallel (ASP) topology for fully integrated switched-capacitor (SC) dc-dc boost converters with flexible fractional voltage conversion ratios (VCRs). By elaborating the output voltage (V-OUT) expression into a specific algebraic form, the proposed ASP can achieve improvements on both the charge sharing and bottom-plate-parasitic losses while maintaining the high topology and fractional VCR flexibility of conventional two-dimensional series-parallel (2DSP) converters. The proposed method consists of a generic ASP topology framework with systematic parameter determination for a precise converter implementation, and can theoretically surpass the power-conversion efficiency (PCE) of 2DSP converters. Fabricated in 65-nm bulk CMOS, we designed a fully integrated ASP-based SC rational boost converter by cascading with the Dickson topology, with a total of seven rational VCRs to boost an input voltage of 0.25-1 V to a 1-V output. Delivering a maximum loading power of 20.4 mW, the chip prototype achieves a peak efficiency of 80% at a power density of 22.7 mW/mm(2).

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