1.55-μm Lasers Epitaxially Grown on Silicon

We have developed InP-based 1.55-mu m lasers epitaxially grown on (001) Si substrates for photonics integration. To overcome the fundamental material challenges associated with mismatch III-V on Si hetero-epitaxy, a Si V-groove epitaxy platform was established, leading to device quality III-V nanostructures and thin films. Combining metal organic chemical vapor deposition grown 1.55-mu m InAs quantum dots (QDs) and the InP/Si thin-film templates, we have achieved electrically driven 1.55-mu m QD lasers on Si operating at room temperature. To reduce device footprint and energy consumption, a bufferless integration path by growing InP nano-ridge lasers on prepatterned silicon-on-insulators wafers has been explored. Material and device characterizations and an outlook for device component integration are discussed.