期刊
IEEE ELECTRON DEVICE LETTERS
卷 40, 期 11, 页码 1788-1791出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2939788
关键词
Implantation; edge termination; beta-Ga2O3; vertical Schottky diode
资金
- National Key Research and Development Program [2016YFB0400100]
- National Key Science and Technology Special Project [2017ZX01001301]
This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of the vertical \beta -Ga2O3 Schottky barrier diode (SBD). With this ET, vertical \beta -Ga2O3 SBD demonstrates a reverse blocking voltage of 1.55 kV and low specific on-resistance ( {R} _{ \mathrm{\scriptscriptstyle ON},\textrm {sp}} ) of 5.1 \text{m}\Omega \cdot \textrm {cm}<^>{\textrm {2}} at a lightly doped \beta -Ga2O3 layer with epitaxial thickness of 10\mu \text{m} , yielding a high power figure-of-merit (P-FOM) of 0.47 GW/cm(2). Combined with high forward current on/off ratio of 10(8) & x007E; 10(9), Schottky barrier height of 1.01 eV, and ideality factor of 1.05, vertical \beta -Ga2O3 Schottky Diode with implanted ET verifies its great potential for future power rectifiers.
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