期刊
CURRENT APPLIED PHYSICS
卷 19, 期 10, 页码 1127-1131出版社
ELSEVIER
DOI: 10.1016/j.cap.2019.07.007
关键词
CVD; MoS2; Monolayer; FET; Photoresponse
资金
- Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), from the Ministry of Trade, Industry Energy [20164030201380]
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [NRF-2018R1D1A1B07041804, NRF-2019R1A2C1007913]
Large-scale growth of mostly monolayer molybdenum disulfide (MoS2) on quartz, sapphire, SiO2/Si, and waveguide substrates is demonstrated by chemical vapor deposition with the same growth parameters. Centimeterscale areas with large flakes and films of MoS2 on all the growth substrates are observed. The atomic force microscopy and Raman measurements indicate the synthesized MoS2 is monolayer with high quality and uniformity. The MoS2 field effect transistors based on the as-grown MoS2 exhibit carrier mobility of 1-2 cm(2)V(-1)s(-1) and On/Off ratio of similar to 10(4) while showing large photoresponse. Our results provide a simple approach to realize MoS2 on various substrates for electronics and optoelectronics applications.
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