Characterization of single crystal β-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD

Gallium oxide (Ga2O3) films have been deposited on SrTiO3 (100) substrates by using the metal-organic chemical vapor deposition (MOCVD) method. Post-deposition annealing was performed at different temperatures. XRD theta-2 theta scans displayed that the annealing at 1000 degrees C leaded to beta phase Ga2O3 film with the best crystalline quality. Microstructural and chemical composition analyses revealed that this film was single crystal beta-Ga2O3 with stoichiometric ratio. The epitaxial relationships were clearly determined asp-Ga2O3 (100) parallel to SrTiO3 (100) with beta-Ga2O3 [001] parallel to SrTiO3 < 011 > . All of the prepared Ga2O3 samples have average transmittances in the visible range of more than 70%.