Epitaxial TiN formation on rutile titanium dioxide (001) single crystal by nitridation

TiN has been synthesized by plasma nitridation of single crystalline ruffle (TiO2). Nitridation of single crystalline ruffle (0 0 1) was performed with microwave plasma of N-2 gas. The chemical evidence for TiN formation was determined by x-ray photoelectron spectroscopy and x-ray energy-dispersive spectroscopy with scanning transmission electron microscopy (STEM). Structural characterization from x-ray diffraction patterns and STEM high angle annular dark field images in Z-contrast reveals that TiN consisting of orthogonal domain structure epitaxially forms on ruffle substrate. From the orientation relationship, it is understood that nitridation of ruffle may proceed along [1 1 0](TiO2) to form (1 1 0)-oriented TiN.