Passivating and low-resistive poly-Si tunneling junction enabling high-efficiency monolithic perovskite/silicon tandem solar cells

We present a p(+)/n(+) poly-Si tunneling junction (TJ) based on a tunnel oxide passivated contact (TOPCon) that enables both low contact resistivity rho(c) and high implied open-circuit voltages iV(oc). It will be shown that the charge carrier profile of the TJ and the junction resistance are strongly affected by the applied thermal budget, consisting of a furnace anneal and/or a rapid thermal processing treatment, and the deposition parameters of the a-Si layers. A minimum combined junction resistance of the p(+)/n(+) poly-Si/SiOx stack of less than 10 m omega cm(2) and iV(oc) of up to 726 mV at 1 sun illumination is reported. This work aims for incorporation of our p(+)/n(+) poly-Si TJ into an industrially feasible tandem solar cell featuring a Si bottom cell with a TOPCon front emitter and the industrial standard technology of a passivated emitter and rear cell rear structure.