期刊
APPLIED PHYSICS LETTERS
卷 115, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5120554
关键词
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资金
- National Key RD Project [2018YFB0406502]
- State Key RAMP
- D project of Jiangsu [BE2018115]
- National Nature Science Foundation of China [61774081, 91850112]
- Natural Science Foundation of Jiangsu Province [BK20161401]
- Shenzhen Fundamental Research Project [201773239, 201888588, JCYJ20180307163240991]
- State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices [2017KF001]
- Fundamental Research Funds for the Central Universities [021014380135, 021014380112, 021014380110]
- ANFF ACT Node at Australian National University
- CAM at Australian National University
Epitaxial film quality is critical to the success of high-performance alpha-Ga2O3 vertical power devices. In this work, the origins of threading dislocation generation and annihilation in thick alpha-Ga2O3 films heteroepitaxially grown on sapphire by the mist-CVD technique have been examined by means of high-resolution X-ray diffraction and transmission electron microscopies. By increasing the nominal thickness, screw dislocations exhibit an independent characteristic with a low density of about 1.8 x 10(6) cm(-2), while edge dislocations propagating along the c-axis are dominant, which decrease down to 2.1 x 10(9) cm(-2) in density for an 8 mu m-thick alpha-Ga2O3 layer and exhibit an inverse dependence on the thickness. In the framework of the glide analytical model, parallel edge dislocations are generated at the interface due to the misfit-induced strain relaxation, while the dislocation glide and coalescence result in the annihilation and fusion behaviors. The optimal thick alpha-Ga2O3 with low dislocation densities may provide a prospective alternative to fully realize alpha-Ga2O3 power devices.
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