期刊
APPLIED PHYSICS LETTERS
卷 115, 期 16, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5115526
关键词
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资金
- National Natural Science Foundation of China [11604337]
- Key Lab of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences
Epitaxial BaSnO3 (BSO) thin films doped with different rare-earth elements (La, Pr, and Nd) were prepared by a simple solution deposition method. Grain size engineering through processing was achieved to tune both lateral and vertical grain sizes, resulting in obvious increments in carrier mobility. Improved performance with the room-temperature mobility exceeding 35 cm(2) V-1 s(-1) and resistivity as low as 0.55 m Omega cm was realized. The results will open a low-cost route for preparation of large-area BSO thin films with improved optoelectronic properties through the solution method. Published under license by AIP Publishing.
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