期刊
APPLIED CATALYSIS B-ENVIRONMENTAL
卷 256, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.apcatb.2019.117870
关键词
Edge-rich MoS2; Vacancies-induced growth; Photocatalysis; Double-interface-structure; Hydrogen sulphide splitting
资金
- National Natural Science Foundation of China [U1862111, U1232119, 51102245]
- Innovative Research Team of Sichuan Province [2016TD0011]
- Sichuan Provincial International Cooperation Project [2017HH0030]
In this work, the unsaturated-sulfur-edge-rich (U-s-rich) MoS2 was successfully introduced in MnS/In2S3 composites by a smart S-vacancies-induced strategy. The surface chemical state analysis, photoluminescence (PL) spectra and electron spin resonance (ESR) spectra confirm that the MoS2 with rich U-s can selectively grow on the MnS of MnS/In2S3 composites resulting in the formation of a typical double-interface-structure. The linear sweep voltammetry (LSV) test confirms that the U-s-rich MoS2 processed superior proton reduction activity. Moreover, the superb charge transfer efficiency from MnS to MoS2 and remarkable HS- adsorption performance were verified by the density functional theory (DFT) calculations. As a result, the novel MnS/In2S3-MoS2 (denoted as MI-M) is the state-of-the-art non-noble-metal visible light driven photocatalysts with H-2 evolution rate of 124 mu mol h(-1) from H2S which is 4.5 times higher than that of the pristine MnS/In2S3 heterostructure. The corresponding apparent quantum efficiency (AQE) at 400 nm is as high as 72%.
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