期刊
ADVANCED MATERIALS
卷 32, 期 2, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201906540
关键词
defects; exciton transport; ultrafast microscopy; WS2
类别
资金
- National Natural Science Foundation of China [51527901, 51575298, 51705285, 51705284]
As defects usually limit the exciton diffusion in 2D transition metal dichalcogenides (TMDCs), the interaction knowledge of defects and exciton transport is crucial for achieving efficient TMDC-based devices. A direct visualization of defect-modulated exciton transport is developed in few-layer WS2 by ultrafast transient absorption microscopy. Atomic-scale defects are introduced by argon plasma treatment and identified by aberration-corrected scanning transmission electron microscopy. Neutral excitons can be captured by defects to form bound excitons in 7.75-17.88 ps, which provide a nonradiative relaxation channel, leading to decreased exciton lifetime and diffusion coefficient. The exciton diffusion length of defective sample has a drastic reduction from 349.44 to 107.40 nm. These spatially and temporally resolved measurements reveal the interaction mechanism between defects and exciton transport dynamics in 2D TMDCs, giving a guideline for designing high-performance TMDC-based devices.
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