Effects of Surface Chemistry on the Photophysics of Colloidal InP Nanocrystals

Indium phosphide (InP) semiconductor nanocrystals (NCs) provide a promising alternative to traditional heavymetal-based luminescent materials for lighting and display technologies, and implementation of InP NCs in consumer products is rapidly increasing. As-synthesized InP NCs typically have very low photoluminescence quantum yields (PLQY), however. Although empirical methods have led to NCs with near-unity PLQYs, a fundamental understanding of how specific synthetic and post-synthetic protocols can alter the electronic landscape of InP NCs is still lacking. Here, we have studied a series of homologous InP NCs prepared from InP clusters using a combination of room-temperature and low-temperature time resolved spectroscopies to elucidate how specific charge-carrier trapping processes are affected when various surface modifications are performed. The data allow identification of large PLQY increases that occur specifically through elimination of surface electron traps and provide a rationale for understanding the microscopic origins of this trap suppression in terms of elimination of undercoordinated surface In' ions. Despite essentially complete elimination of surface electron trapping when surface In' is addressed, hole trapping still exists. This hole trapping is shown to be partially suppressed by even very thin shell growth, attributable to elimination of undercoordinated surface phosphides. We also observe signatures of bright-dark excitonic splitting in InP NCs with only submonolayer surface coverage of select additives (divalent Lewis acids or fluoride anions)-signatures that have only been previously observed in thickshelled InP NCs. Together, these synthetic and spectroscopic results improve our understanding of relationships between specific InP NC surface chemistries and the resulting NC photophysics.