Origin of Open-Circuit Voltage Losses in Perovskite Solar Cells Investigated by Surface Photovoltage Measurement

Increasing the open-circuit voltage (V-oc) is one of the key strategies for further improvement of the efficiency of perovskite solar cells. It requires fundamental understanding of the complex optoelectronic processes related to charge carrier generation, transport, extraction, and their loss mechanisms inside a device upon illumination. Herein, we report the important origin of V-oc losses in methylammonium lead iodide perovskite (MAPI)-based solar cells, which results from undesirable positive charge (hole) accumulation at the interface between the perovskite photoactive layer and the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole-transport layer. We show strong correlation between the thickness-dependent surface photo voltage and device performance, unraveling that the interfacial charge accumulation leads to charge carrier recombination and results in a large decrease in V-oc for the PEDOT:PSS/MAPI inverted devices (180 mV reduction in 50 nm thick device compared to 230 nm thick one). In contrast, accumulated positive charges at the TiO2/MAPI interface modify interfacial energy band bending, which leads to an increase in V-oc for the TiO2/MAPI conventional devices (70 mV increase in 50 nm thick device compared to 230 nm thick one). Our results provide an important guideline for better control of interfaces in perovskite solar cells to improve device performance further.