期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 49, 页码 45796-45804出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b17241
关键词
perovskite solar cells; perovskite silicon tandem solar cells; tin-doped indium oxide; sputter process; process optimization
资金
- German Federal Ministry for Economic Affairs and Energy [0324037A]
- European Union's Horizon 2020 research and innovation program [641023]
- Deutsche Bundesstiftung Umwelt (DBU)
- H2020 Societal Challenges Programme [641023] Funding Source: H2020 Societal Challenges Programme
Perovskite silicon tandem solar cells have the potential to overcome the efficiency limit of single-junction solar cells. For both monolithic and mechanically stacked tandem devices, a semi-transparent perovskite top solar cell, including a transparent contact, is required. Usually, this contact consists of a metal oxide buffer layer and a sputtered transparent conductive oxide. In this work, semi-transparent perovskite solar cells in the regular n-i-p structure are presented with tin-doped indium oxide (ITO) directly sputtered on the hole conducting material Spiro-OMeTAD. ITO process parameters such as sputter power, temperature, and pressure in the chamber are systematically varied. While a low temperature of 50 degrees C is crucial for good device performance, a low sputter power has only a slight effect, and an increased chamber pressure has no influence on device performance. For the 5 x 5 mm(2) perovskite cell with a planar front side, a 105 nm thick ITO layer with a sheet resistance of 44 Omega sq(-1) allowing for the omission of grid fingers and a MgF2 antireflection coating are used to improve transmission into the solar cells. The best device achieved an efficiency of 14.8%, which would result in 24.2% in a four-terminal tandem configuration.
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