4.8 Article

Self-Powered Perovskite/CdS Heterostructure Photodetectors

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 43, 页码 40204-40213

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b11835

关键词

perovskite; photodetector; photovoltaic; heterojunction; photoconductive atomic force microscopy; self-powered photodetectors

资金

  1. Science and Technology Innovation Commission of Shenzhen [JCYJ20170817100111548, JCYJ20170817101100705, ZDSYS201707271014468]
  2. National Natural Science Foundation of China [51602200, 61874074, 21603192]
  3. (Key) Project of Department of Education of Guangdong Province [2016KZDXM008]
  4. Shenzhen Peacock Plan [KQTD2016053112042971]
  5. King Abdullah University of Science and Technology (KAUST)

向作者/读者索取更多资源

Methylammonium lead halide perovskites have gained a lot of attention because of their remarkable physical properties and potential for numerous (opto)electronic applications. Here, high-performance photodetectors based on CH3NH3PbI3 (MAPbI(3))/CdS heterostructures are demonstrated. The resulting self-powered MAPbI(3)/CdS photo detectors show excellent operating characteristics including a maximum detectivity of 2.3 X 10(11) Jones with a responsivity of 0.43 A/W measured at 730 nm. A temporal response time of less than 14 ms was achieved. The mechanisms of charge separation and transport at the interface of the MAPbI(3)/CdS junction were investigated via conductive atomic force microscopy (AFM) and photoconductive AFM. Obtained results show that grain boundaries exhibit higher photocurrent than flat regions of the top perovskite layer, which indicates that excitons preferentially separate at the grain boundaries of the perovskite thin film, that is, at the edges of the MAPbI(3) crystals. The study of the photoelectric mechanism at the nanoscale suggests the device performance could potentially be fine-tuned through grain boundary engineering, which provides essential insights for the fabrication of the high-performance photodetector. The demonstrated self-powered photodetector is promising for numerous applications in low-energy consumption optoelectronic devices.

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