期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 43, 页码 40347-40357出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b14942
关键词
air stability; fluorine atom; naphthalenediimide; n-type conjugated polymers; organic field-effect transistors
资金
- National Research Foundation of Korea (NRF) - Korean government (MSIP) [2018R1A2A1A05077194, 2017R1E1A1A01074090]
- Center for Advanced Soft Electronics under the Global Frontier Research Program through the NRF by the Ministry of Science and ICT (MSIT) [2012M3A6A5055225, 2013M3A6A5073175]
- Wearable Platform Materials Technology Center (WMC) - National Research Foundation of Korea (NRF) grant by the Korean Government (MSIT) [2016R1ASA1009926]
- Development Program of the Korea Institute of Energy Research (KIER) [B9-2411]
- Ulsan City of UNIST (Ulsan National Institute of Science Technology) [1.190099]
- Agency for Defense Development (ADD)
- National Research Foundation of Korea [2017R1E1A1A01074090] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A family of copolymers (P(NDIOD-T2Fx)) based on naphthalenedii-mide (NDI) and 2,2'-bithiophene (T2) units with different amounts of 3,3'-difluoro2,2'-bithiophene (T2F) decoration were synthesized, characterized, and used in n-type organic field-effect transistors (OFETs). With increasing T2F content in the backbone, we observe increased melting and crystallization transitions, blue-shifted absorptions, and deeper-lying highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) levels, together with improved hydrophobicity. The highest electron mobility of 4.48 x 10(-1) cm(2) V-1 s(-1) was obtained for P(NDIOD-T2F0) without a T2F unit, which is attributed to the larger domain grains and crystallites, as well as a more tightly packed and oriented crystalline structure, as evidenced from the morphological study. In contrast, P(NDIOD-T2F100) with the highest T2F content has superior air stability, showing greater than 25% electron mobility retention after 30 days in wet conditions of 100% relative humidity without encapsulation. Even P(NDIOD-T2F100) is able to operate normally after 30 min of immersion in water, which is due to the synergistic contributions from the deep HOMO/LUMO levels and improved hydrophobicity. This study advances our fundamental understanding of how the morphology/crystallinity, device performance, and device stability of n-type copolymers are tuned by incorporating different concentrations of T2F in the backbone, shedding light on an important modification for air- and water-stable n-type materials for future OFET applications.
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