期刊
ACS APPLIED MATERIALS & INTERFACES
卷 11, 期 43, 页码 39765-39771出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b11219
关键词
2D material; van der Waals heterojunction; h-BN; WSe2; MoS2; surface passivation; solar cell
资金
- National Research Foundation of Korea (NRF) - Korea government (MSIT) [NRF-2017R1E1A1A01074087]
Two-dimensional (2D) semiconductors can be promising active materials for solar cells due to their advantageous electrical and optical properties, in addition to their ability to form high-quality van der Waals (vdW) heterojunctions using a simple process. Furthermore, the atomically thin nature of these 2D materials allows them to form lightweight and transparent thin-film solar cells. However, strategies appropriate for optimizing their properties have not been extensively studied yet. In this paper, we propose a method for reducing the electrical loss of 2D vdW solar cells by introducing hexagonal boron nitride (h-BN) as a surface passivation layer. This method allowed us to enhance the photovoltaic performance of a MoS2/WSe, solar cell. In particular, we observed 74% improvement of the power conversion efficiency owing to a large increase in both shortcircuit current and open-circuit voltage. Such a remarkable performance enhancement was due to the reduction of the recombination rate at the junction and surface of nonoverlapped semiconductor regions, which was confirmed via a time resolved photoluminescence analysis. Furthermore, the h-BN top layer was found to improve the long-term stability of the tested 2D solar cell under ambient conditions. We observed the evolution of our MoS2/WSe, solar cell for a month and found that h-BN passivation effectively suppressed its degradation speed. In particular, the degradation speed of the passivated cell was twice as low as that of a nonpassivated cell. This work reveals that h-BN can successfully suppress the electrical loss and degradation of 2D vdW heterojunction solar cells under ambient conditions.
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